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| INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 *FEATURES *Drain Current -ID=8.0A@ TC=25 *Drain Source Voltage: VDSS= 500V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.85(Max) *DESCRITION *Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and relay drivers. *ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25 Max. Operating Junction Temperature Storage Temperature VALUE 500 20 8 32 125 150 -55~150 UNIT V V A A W *THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN IRF840 MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4A VGS= 20V;VDS= 0 0.85 500 IGSS Gate-Body Leakage Current nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS=0 250 nA VSD Forward On-Voltage IS= 8A; VGS=0 2.0 V * isc Websitewww.iscsemi.cn |
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